FDW2509NZ mosfet equivalent, common drain n-channel 2.5v specified powertrench mosfet.
* 7.1 A, 20 V. RDS(ON) = 20 mΩ @ VGS = 4.5 V RDS(ON) = 26 mΩ @ VGS = 2.5 V Extended VGSS range (±12V) for battery applications ESD protection diode (note 3) High perf.
with a wide range of gate drive voltage (2.5V
– 12V).
Features
* 7.1 A, 20 V. RDS(ON) = 20 mΩ @ VGS.
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild’s Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V
– 12V).
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